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NP80N06MLG, NP80N06NLG, NP80N06PLG
TYPICAL CHARACTERISTICS (T A = 25 ° C)
120
100
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
125
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
80
75
60
50
40
20
0
25
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
1000
T C - Case Temperature - ° C
FORWARD BIAS SAFE OPERATING AREA
T C - Case Temperature - ° C
S(
R
on
it e
Li m V )
=1
100
D
(V
)
GS
i 0
d
I D(DC)
DC
I D(pulse)
PW
=
1 i 0
0
μ s
10
1
T C = 25 ° C
0.1
Single Pulse
0.1
1
10
100
V DS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
R th(ch-A) = 83.3 ° C/W
10
R th(ch-C) = 1.30 ° C/W
1
0.1
Single Pulse
0.01
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
4
Data Sheet D19798EJ1V0DS
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功能描述:MOSFET N-CH 60V 82A TO-263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
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制造商:NEC 制造商全称:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET
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制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:MOS FIELD EFFECT TRANSISTOR
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